News

Elucidation of scattering mechanism of 2DEG in ScAlN/GaN heterostructure: Paving the Way for Performance Enhancement of High-Frequency GaN HEMTs

Riku Kobayashi (M1) from the Department of Electrical Engineering and Information Systems received the Best Student Paper Award at the IEEE WPTCE 2025.

Tiny Shifts of Oxygen Atoms Enable Magnetization Reversal: Breakthrough in Highly Efficient Magnetization Switching in a Single-Layer Ferromagnetic Weyl Oxide

The guidance will be held on the following days in Japanese. The recordings will be published afterwards.

Professor Ryuji Matsuhashi (EEIS) has been awarded the 2024 Japan Institute of Energy Award (Academic Division)

Assistant Professor Masahiro Mae of EEIC has received the Yasujirou Niwa Memorial Paper Award.

Revolutionizing memory devices: A giant resistance-change memristor for storing magnetic field history