The research target is the ultimate accumulation device that should be called "Extended CMOS" that combines various functions. In order to realize Extended CMOS, we are conducting research on ultra -low power transistor technology, random characteristic variety of scaled transistors, miniaturized silicone nano wire transistors, new functional silicon quantum information devices, and their integration. Based on “More Moore” technology centered on traditional transistors with high performance, we develop the vision that the Extended CMOS spreads by fusion of various functions.

In the field of power devices, it is still possible to enhance the performance of silicon power transistors. In addition to ideas of scaled IGBT and double-gate IGBT, we are developing a new idea of lateral silicon power MOSFETs with extremely low on-resistance.

Silicon quantum bits are attractive because they can be fabricated by the advanced CMOS compatible process. In this study, we are aiming at the development of 3D integration of silicon qubits by vertically stacked silicon quantum dots.