Tatsuro Endo (D1), Associate Professor Masaki Kobayashi, Associate Professor Le Duc Anh, Associate Professor Munetoshi Seki, Professor Hitoshi Tabata, Professor Masaaki Tanaka, and Professor Shinobu Ohya et al., in the Department of Electrical Engineering and Systems Engineering, have made lateral 2-terminal spin-valve devices, the basis of spin transistors, using single crystal oxides and succeeded in obtaining a large magnetoresistance ratio, more than 10 times greater than previous lateral spin-valve devices, and in gate modulation of a current. This result has been published in Wiley's journal Advanced Materials. A press release was issued by the University of Tokyo and reported by several media outlets.