Yusuke Wakamoto from the Ozeki Laboratory, a first-year master's student, has received the Presentation Encouragement Award at the 16th Nano-Structure Epitaxial Growth Conference.

Name of award and short explanation about the award

The Presentation Encouragement Award is given to young members who present outstanding papers contributing to the advancement of crystal growth and related research at the Nano-Epi Subcommittee conference. The award aims to recognize their achievements.

About awarded research(activity)

Yusuke Wakamoto, a first-year master's student in the Department of Electrical Engineering, presented his research titled "High-Temperature Characteristics of the Drift Velocity of Two-Dimensional Electron Gas in AlGaN/GaN Heterojunctions" at the 16th Nano-Structure Epitaxial Growth Conference held at the Kochi Prefectural Cultural Hall from May 30 to June 1, 2024. This research builds on his undergraduate work conducted in the Maeda Laboratory. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are used in power amplifiers for mobile base stations and compact chargers, utilizing the unique properties of GaN. This study precisely examined the field dependence of drift velocity in the electron channel over a temperature range from room temperature to 300°C, successfully evaluating its high-temperature characteristics. The findings of this study provide important insights into understanding the device characteristics of GaN HEMTs under high-temperature conditions.

Your impression & future plan

I am deeply honored to receive this prestigious award. I am grateful to Professor Maeda, my laboratory members, and my collaborators for their tremendous support in carrying out this research. I will continue to devote myself to my research with even greater enthusiasm.

Nanoepi Society HP: https://sites.google.com/view/nanoepi/event?authuser=0
Maeda Laboratory HP: https://sites.google.com/g.ecc.u-tokyo.ac.jp/maeda-lab/home